Semiconductor Manufacturing Apparatus and Manufacturing Method for Semiconductor Device

ABSTRACT

A semiconductor manufacturing apparatus includes a thrust-up unit having a plurality of blocks in contact with a dicing tape, a head having a collet absorbing the die and capable of being moved up and down, and a control section controlling the operation of the thrust-up unit and the head. The thrust-up unit can operate each of the plurality of blocks independently. The control section configures the thrust-up sequences of the plurality of blocks in a plurality of steps, and controls the operation of the plurality of blocks on the basis of a time chart recipe capable of setting the height and the speed of the plurality of blocks for each block and in each step.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.16/813,126, filed Mar. 9, 2020, which claims priority to Japanese PatentApplication No. 2019-056583, filed Mar. 25, 2019, the disclosures of allof which are expressly incorporated by reference herein.

BACKGROUND

This disclosure relates to a semiconductor manufacturing apparatus, andis applicable to, for example, a die bonder including a thrust-up unit.

Typically, the die bonder that mounts a semiconductor chip called a dieonto the surface of, for example, a wiring substrate, a lead frame, andthe like (hereinafter, collectively referred to as a substrate)repeatedly performs an operation (working) in which typically, the dieis conveyed onto the substrate by using an absorption nozzle such as acollet, to apply a pressing force, and a joining material is heated toperform bonding.

The die bonding step by the semiconductor manufacturing apparatus suchas the die bonder includes a separation step for separating the diedivided from a semiconductor wafer (hereinafter, referred to as awafer). The separation step thrusts up each die from the back face of adicing tape by the thrust-up unit, separates the die from the dicingtape held by a die supplying section, and conveys the die onto thesubstrate by using the absorption nozzle such as the collet.

For example, according to Japanese Unexamined Patent ApplicationPublication No. 2005-117019 (Patent Literature 1), when among aplurality of dies stuck on a dicing tape, the die to be separated isthrusted up and is separated from the dicing tape, an absorption piece(thrust-up unit) pushes up multi stage blocks into pyramid shape by onedriving shaft of a pusher, thereby separating the die from the dicingtape at low stress, starting from its periphery.

SUMMARY

In recent years, the appearance of a die stack package and a 3D-NAND(three-dimensional NAND flash) has made the wafer (die) thinner. Thethinner die extremely lowers the rigidity of the die, as compared withthe tackiness force of the dicing tape. Consequently, to pick up thethin die having, for example, a thickness below several tens of μm, thereduction of the stress applied to the die (lowered stress) is required.

In the above thrust-up of the multi stage blocks by the one drivingshaft, the operation order (thrust-up sequences) and the thrust-upamount of each block are limited to be mechanically constant, so thatwhen the conditions such as the type of the dicing tape and thethickness of the die are changed, the operation order and the thrust-upamount of the block is not always optimum.

An object of this disclosure is to provide a semiconductor manufacturingapparatus that can easily change thrust-up sequences.

Other objects and novel features will be apparent from the descriptionherein and the accompanying drawings.

The overview of the representative invention of this disclosure will bebriefly described as follows.

That is, a semiconductor manufacturing apparatus includes a thrust-upunit having a plurality of blocks in contact with a dicing tape, a headhaving a collet absorbing the die and capable of being moved up anddown, and a control section controlling the operation of the thrust-upunit and the head. The thrust-up unit can operate each of the pluralityof blocks independently. The control section configures the thrust-upsequences of the plurality of blocks in a plurality of steps, andcontrols the operation of the plurality of blocks on the basis of a timechart recipe capable of setting the height and the speed of theplurality of blocks for each block and in each step.

According to the semiconductor manufacturing apparatus, the thrust-upsequences can be easily changed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram illustrating the configuration of asemiconductor manufacturing apparatus of an embodiment;

FIG. 2 is an essential part cross-sectional view of a thrust-up unit inthe state of being in contact with a dicing tape;

FIGS. 3A to 3D are diagrams illustrating an example of the thrust-upsequences of RMS;

FIGS. 4A and 4B are diagrams of assistance in explaining an example of afirst time chart recipe of the sequences of FIGS. 3A to 3D;

FIGS. 5A and 5B are diagrams of assistance in explaining another exampleof the first time chart recipe of the sequences of FIGS. 3A to 3D;

FIG. 6 is a diagram illustrating the numerical value example of thefirst time chart recipe of FIGS. 5A and 5B;

FIGS. 7A and 7B are diagrams of assistance in explaining an example of asecond time chart recipe of the sequences of FIGS. 3A to 3D;

FIG. 8 is a diagram illustrating the numerical value example of thesecond time chart recipe of FIGS. 7A and 7B;

FIG. 9 is a diagram of assistance in explaining a third time chartrecipe;

FIGS. 10A and 10B are diagrams of assistance in explaining an example ofthe third time chart recipe of FIG. 9 ;

FIG. 11 is a diagram of assistance in explaining a fourth time chartrecipe;

FIG. 12 is a diagram of assistance in explaining a fifth time chartrecipe;

FIG. 13 is a diagram of assistance in explaining a sixth time chartrecipe;

FIGS. 14A to 14D are diagrams illustrating the thrust-up sequences of afirst operation example;

FIG. 15 is a diagram illustrating the block operation timing of thethrust-up sequences of the first operation example;

FIGS. 16A to 16D are diagrams illustrating the thrust-up sequences of asecond operation example;

FIG. 17 is a diagram illustrating the block operation timing of thethrust-up sequences of the second operation example;

FIG. 18 is a diagram illustrating the thrust-up sequences of a thirdoperation example;

FIG. 19 is a diagram illustrating the thrust-up sequences of a fourthoperation example;

FIG. 20 is a concept diagram of a die bonder according to an example,seen from the top;

FIG. 21 is a diagram of assistance in explaining the operation of apick-up head and a bonding head, seen in the direction of an arrow A ofFIG. 20 ;

FIG. 22 is a diagram illustrating an appearance perspective view of adie supplying section of FIG. 20 ;

FIG. 23 is a schematic cross-sectional view illustrating the main partof the die supplying section of FIG. 20 ;

FIG. 24 is an appearance perspective view of the thrust-up unit of FIG.23 ;

FIG. 25 is a top view of part of a first unit of FIG. 24 ;

FIG. 26 is a top view of part of a second unit of FIG. 24 ;

FIG. 27 is a top view of part of a third unit of FIG. 24 ;

FIG. 28 is a longitudinal cross-sectional view of the thrust-up unit ofFIG. 24 ;

FIG. 29 is a longitudinal cross-sectional view of the thrust-up unit ofFIG. 24 ;

FIG. 30 is a diagram illustrating the configuration of the thrust-upunit and a collet of the pick-up head according to the example;

FIG. 31 is a block diagram illustrating the schematic configuration of acontrol system of the die bonder of FIG. 20 ;

FIG. 32 is a flowchart of assistance in explaining the pick-up operationof the die bonder of FIG. 20 ; and

FIG. 33 is a flowchart of assistance in explaining a manufacturingmethod for a semiconductor device according to the example.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, an embodiment and an example will be described withreference to the drawings. However, in the following description, thesame components are indicated by the same reference numerals, and therepeated description thereof is sometimes omitted. It should be notedthat to make the description more clearly, the width, the thickness, theshape, and the like of each portion can be schematically represented inthe drawings, as compared with the actual form, but such representationis an example only, and does not limit the understanding of the presentinvention.

Embodiment

First, a semiconductor manufacturing apparatus according to anembodiment will be described with reference to FIG. 1 . FIG. 1 is aschematic diagram illustrating the configuration of the semiconductormanufacturing apparatus according to the embodiment.

A semiconductor manufacturing apparatus 100 according to the embodimentincludes a control section having a main controller 81 a, an operationcontroller 81 b, a monitor 83 a, a touch panel 83 b, and a buzzer 83 g.The semiconductor manufacturing apparatus 100 further includes an XYtable 86 a, a Z driving section 86 b, and a thrust-up unit TU that arecontrolled by the operation controller 81 b. The semiconductormanufacturing apparatus 100 further includes a head (bonding head orpick-up head) BH moved up and down by the Z driving section 86 b, and acollet CLT provided at the end of the head BH. The semiconductormanufacturing apparatus 100 further includes a sensor 87 a detecting theposition of the thrust-up unit TU, a sensor 87 b detecting a pressureand a flow rate, and a sensor 87 c detecting the gas flow rate of thecollet CLT. The thrust-up unit TU includes a function of vacuumabsorbing a dicing tape, and a function of blowing up air to the dicingtape.

Next, the thrust-up unit TU having multi stage thrust-up blocks will bedescribed with reference to FIG. 2 . FIG. 2 is an essential partcross-sectional view of the thrust-up unit in the state of being incontact with the dicing tape.

The thrust-up unit TU has a block BLK having blocks BLK1 to BLK4, and adome plate DP having a plurality of suction holes (not illustrated)absorbing a dicing tape DT. The four blocks BLK1 to BLK4 can be moved upand down independently by needles NDL4 to NDL1, respectively. The planarshape of the blocks BLK1 to BLK4 in concentric square shape is matchedwith the shape of a die D.

For example, the thrust-up unit TU thrusts up the blocks BLK1 to BLK4 atthe same time, and then, further thrusts up the blocks BLK2 to BLK4 atthe same time, and then, further thrusts up the blocks BLK3 and BLK4 atthe same time, and then, further thrusts up the block BLK4, therebymaking them into pyramid shape, or thrusts up the blocks BLK1 to BLK4 atthe same time, and lowers each of them in the order of the block BLK1,the block BLK2, and the block BLK3. The latter is referred to as RMS(Reverse Multi Step) in this disclosure.

The operation of the RMS will be described with reference to FIGS. 3A to3D and FIGS. 4A and 4B. FIGS. 3A to 3D are cross-sectional viewsillustrating an example of the thrust-up sequences of the RMS, FIG. 3Ais a diagram illustrating a first state, FIG. 3B is a diagramillustrating a second state, FIG. 3C is a diagram illustrating a thirdstate, and FIG. 3D is a diagram illustrating a fourth state. FIGS. 4Aand 4B are diagrams of assistance in explaining an example of a firsttime chart recipe of the sequences of FIGS. 3A to 3D, FIG. 4A is adiagram illustrating an example of the block operation timing of thesequences of FIGS. 3A to 3D, and FIG. 4B is a diagram illustrating anexample of the time chart recipe corresponding to the block operationtiming of FIG. 4A.

The pick-up operation is started with the positioning of the targeteddie D on the dicing tape DT to the thrust-up unit TU and the collet CLT.When the positioning is completed, vacuumizing is performed through thesuction holes and the gaps, not illustrated, of the thrust-up unit TU,so that the dicing tape DT is absorbed onto the upper face of thethrust-up unit TU. At this time, the upper faces of the blocks BLK1 toBLK4 are at the same height as the upper face of the dome plate DP(initial position). In that state, vacuum is supplied from a vacuumsupply source, and the collet CLT is lowered toward the device face ofthe die D while performing vacuumizing, and is landed onto it.

Thereafter, as illustrated in FIG. 3A, the blocks BLK1 to BLK4 arelifted to a predetermined height (h1) at the same time at a constantspeed (s1) to be in the first state (State 1). Here, as illustrated inFIG. 4A, when time at which the blocks BLK1 to BLK4 reach the h1 is t1,t1=h1/s1. Thereafter, the operation of the RMS waits for a predeterminedtime (t2). The die D is lifted while being sandwiched between the colletCLT and the blocks BLK1 to BLK4, but the peripheral portion of thedicing tape DT remains vacuum-absorbed onto the dome plate DP that isthe periphery of the thrust-up unit TU, so that a tension occurs in theperiphery of the die D, and as a result, the separation of the dicingtape DT is started in the periphery of the die D.

Subsequently, as illustrated in FIG. 3B, the block BLK1 is lowered to apredetermined height (−h2) lower than the upper face of the dome plateDP at a constant speed (s2) to be in the second state (State 2). Here,as illustrated in FIG. 4A, when time at which the block BLK1 reaches thepredetermined height (−h2) is t3, t3=(h1+h2)/s2. The block BLK1 islowered with respect to the upper face of the dome plate DP, the supportof the dicing tape DT disappears, and the separation of the dicing tapeDT is advanced by the tension of the dicing tape DT.

Subsequently, as illustrated in FIG. 3C, the block BLK2 is lowered tothe predetermined height (−h2) lower than the upper face of the domeplate DP at the constant speed (s2) to be in the third state (State 3).Here, as illustrated in FIG. 4A, when time at which the block BLK2reaches the predetermined height (−h2) is t4, t4=(h1+h2)/s2. The blockBLK2 is lowered with respect to the upper face of the dome plate DP, thesupport of the dicing tape DT disappears, and the separation of thedicing tape DT is further advanced by the tension of the dicing tape DT.

Subsequently, as illustrated in FIG. 3D, the block BLK3 is lowered tothe predetermined height (−h2) lower than the upper face of the domeplate DP at the constant speed (s2) to be in the fourth state (State 4).Here, as illustrated in FIG. 4A, when time at which the block BLK3reaches the predetermined height (−h2) is t5, t5=(h1+h2)/s2. The blockBLK3 is lowered with respect to the upper face of the dome plate DP, thesupport of the dicing tape DT disappears, and the separation of thedicing tape DT is further advanced by the tension of the dicing tape DT.

Thereafter, the collet CLT is pulled upward. Also, as illustrated inFIG. 4A, the blocks BLK1 to BLK3 are lifted at a constant speed (s3)after a predetermined time (t6) from the fourth state, and the blockBLK4 is lowered at a constant speed (s4) to be returned to the initialposition. Here, when time at which the blocks BLK1 to BLK3 reach theinitial position is t8, t8=h2/s3, and when time at which the block BLK4reaches the initial position is t9, t9=h1/s4. With this, the operationof separating the die D from the dicing tape DT is completed.

Next, the setting method and the control of the operation of the RMSwill be described with reference to FIGS. 4A and 4B.

As illustrated in FIG. 4B, the operation of the respective blocks BLK1,BLK2, BLK3, and BLK4 of the thrust-up unit TU is configured so that themain controller 81 a and the operation controller 81 b control theneedles NDL4, NDL3, NDL2, and NDL1 driving the respective blocks BLK1,BLK2, BLK3, and BLK4, respectively, on the basis of the first time chartrecipe setting the step time, the block lifting or lowering speed, andthe block height (position) for each block and in each step.

A plurality of time chart recipes having different setting items areprepared, the user selects one of the plurality of time chart recipes byGUI (Graphical User Interface), and inputs a set value to the item ofthe selected time chart recipe. Alternatively, the user performs datacommunication for the time chart recipe to which the set value ispreviously inputted, from external equipment to the semiconductormanufacturing apparatus such as a die bonder, or installs the time chartrecipe from an external memory device (for example, a magnetic tape, amagnetic disk such as a flexible disk and a hard disk, an optical disksuch as a CD and a DVD, a magneto-optical disk such as an MO, and asemiconductor memory such as a USB memory and a memory card) to thesemiconductor manufacturing apparatus. Also, the main controller 81 acan rewrite the time chart recipe in real time on the basis of the statedetected by the sensors 87 a, 87 b, 87 c, and the like to instruct theoperation controller 81 b to change the thrust-up operation.

First Time Chart Recipe

The operation on the basis of the first time chart recipe of FIG. 4Bwill be described in detail.

(1) Block BLK1

Time in the first step (STEP1) is (t1+t2), and the operation controller81 b lifts the block BLK1 from the beginning of the first step to theheight of the h1 at the speed of the s1 to maintain the state at theheight of the h1. The first step (STEP1) of the block BLK1 correspondsto the first state of FIG. 3A.

Time in the second step (STEP2) is (t3+t4+t5+t6), and the operationcontroller 81 b lowers the block BLK1 from the beginning of the secondstep to the height of the −h2 at the speed of the s2 to maintain thestate at the height of the −h2. The second step (STEP2) of the blockBLK1 corresponds to the second state to the fourth state of FIG. 3B.

Time in the third step (STEP3) is t7, and the operation controller 81 blifts the block BLK1 from the beginning of the third step to the initialposition (the height of 0) at the speed of the s3.

(2) Block BLK2

Time in the first step (STEP1) is (t1+t2+t3), and the operationcontroller 81 b lifts the block BLK2 from the beginning of the firststep to the height of the h1 at the speed of the s1 to maintain thestate at the height of the h1. The first step (STEP1) of the block BLK2corresponds to the first state of FIG. 3A and the second state of FIG.3B.

Time in the second step (STEP2) is (t4+t5+t6), and the operationcontroller 81 b lowers the block BLK2 from the beginning of the secondstep to the height of the −h2 at the speed of the s2 to maintain thestate at the height of the −h2. The second step (STEP2) of the blockBLK2 corresponds to the third state of FIG. 3C and the fourth state ofFIG. 3D.

Time in the third step (STEP3) is the t7, and the operation controller81 b lifts the block BLK2 from the beginning of the third step to theinitial position (the height of 0) at the speed of the s3.

(3) Block BLK3

Time in the first step (STEP1) is (t1+t2+t3+4), and the operationcontroller 81 b lifts the block BLK3 from the beginning of the firststep to the height of the h1 at the speed of the s1 to maintain thestate at the height of the h1. The first step (STEP1) of the block BLK3corresponds to the first state of FIG. 3A, the second state of FIG. 3B,and the third state of FIG. 3C.

Time in the second step (STEP2) is (t5+t6), as illustrated in FIG. 4B,and the operation controller 81 b lowers the block BLK3 from thebeginning of the second step to the height of the −h2 at the speed ofthe s2 to maintain the state at the height of the −h2. The second step(STEP2) of the block BLK3 corresponds to the fourth state of FIG. 3D.

Time in the third step (STEP3) is the t7, and the operation controller81 b lifts the block BLK3 from the beginning of the third step to theinitial position (the height of 0) at the speed of the s3.

(4) Block BLK4

Time in the first step (STEP1) is (t1+t2+t3+t4+t5+t6) as illustrated inFIG. 4B, and the operation controller 81 b lifts the block BLK4 from thebeginning of the first step to the height of the h1 at the speed of thes1 set in the first time chart recipe of FIG. 4B to maintain the stateat the height of the h1. The first step (STEP1) of the block BLK4corresponds to the first state of FIG. 3A, the second state of FIG. 3B,the third state of FIG. 3C, and the fourth state of FIG. 3D.

Time in the second step (STEP2) is the t7, and the operation controller81 b lowers the block BLK4 from the beginning of the second step to theinitial position (the height of 0) at the speed of the s4.

The Different Operation Timing Example of the First Time Chart Recipe

Another example of the block operation timing of the sequences of FIGS.3A to 3D will be described with reference to FIGS. 5A, 5B, and 6 . FIGS.5A and 5B are diagrams of assistance in explaining another example ofthe first time chart recipe of the sequences of FIGS. 3A to 3D, FIG. 5Ais a diagram illustrating another example of the block operation timingof the sequences of FIGS. 3A to 3D, and FIG. 5B is a diagramillustrating an example of the time chart recipe corresponding to theblock operation timing of FIG. 5A. FIG. 6 is a diagram illustrating thenumerical value example of the time chart recipe of FIG. 5B.

In the block operation timing of FIG. 4A, the lowering operation of theblock BLK2 is started after the lowering operation of the block BLK1,and the lowering operation of the block BLK3 is started after thelowering operation of the block BLK2, whereas in the block operationtiming of FIG. 5A, the lowering operation of the block BLK2 is startedduring the lowering operation of the block BLK1, and the loweringoperation of the block BLK3 is started during the lowering operation ofthe block BLK2. The first time chart recipe of FIG. 5B is the same asthe first time chart recipe of FIG. 4B except that time set to the“time” of the first time chart recipe of FIG. 5B is shorter than timeset to the “time” of the first time chart recipe of FIG. 4B.

The difference between the time chart recipe of FIG. 5B and the timechart recipe of FIG. 4B will be described.

(1) Block BLK1

The set value of the first time chart recipe of FIG. 5B with respect tothe block BLK1 is the same as the set value of the first time chartrecipe of FIG. 4B with respect to the block BLK1 except for the secondstep (STEP2). Time of (t3+t4′+t5′+t6) of the second step (STEP2) of FIG.5B is shorter than time of (t3+t4+t5+t6) of the second step (STEP2) ofFIG. 4B. Here, t4′<t4, and t5′<t5.

(2) Block BLK2

The set value of the first time chart recipe of FIG. 5B with respect tothe block BLK2 is the same as the set value of the first time chartrecipe of FIG. 4B with respect to the block BLK2 except for the firststep (STEP1) and the second step (STEP2).

Time in the first step (STEP1) is (t1+t2+t10), as illustrated in FIG.5B, and is shorter than (t1+t2+t3) of FIG. 4B. Here, t10<t3.

Time in the second step (STEP2) is (t3−t10+t4′+t5′+t6) as illustrated inFIG. 5B, and is shorter than (t4+t5+t6) of FIG. 4B. Here, t3−t10+t4′=t4,and t5′<t5.

(3) Block BLK3

The set value of the first time chart recipe of FIG. 5B with respect tothe block BLK3 is the same as the set value of the first time chartrecipe of FIG. 4B with respect to the block BLK3 except for the firststep (STEP1) and the second step (STEP2).

Time in the first step (STEP1) is (t1+t2+t10+t11), as illustrated inFIG. 5B, and is shorter than (t1+t2+t3+t4) of FIG. 4B. Here, t10<t3, andt11<t4.

Time in the second step (STEP2) is (t3+t4′+t5′−t10−t11+t6) asillustrated in FIG. 5B, and is the same as (t5+t6) of FIG. 4B. Here,t5=(t3+t4′+t5′−t10−t11).

(4) Block BLK4

The set value of the first time chart recipe of FIG. 5B with respect tothe block BLK4 is the same as the set value of the first time chartrecipe of FIG. 4B with respect to the block BLK4 except for the firststep (STEP1).

Time in the first step (STEP1) is (t1+t2+t3+t4′+t5′+t6) as illustratedin FIG. 5B, and is shorter than (t1+t2+t3+t4+t5+t6) of FIG. 4B. Here,t4′<t4, t5′<t5.

FIG. 6 illustrates an example in which in FIG. 5B, t1=40 ms, t2=50 ms,t3=50 ms, t4′=t5′=10 ms, t6=60 ms, t7=30 ms, t10=t11=10 ms,s1=s2=s3=s4=5 mm/s, h1=200 μm, and −h2=−50 μm.

Second Time Chart Recipe

The block operation timing of FIG. 5A can also be set in another timechart recipe (a second time chart recipe). The second time chart recipewill be described with reference to FIGS. 7A, 7B, and 8 .

FIGS. 7A and 7B are diagrams of assistance in explaining an example ofthe second time chart recipe of the sequences of FIGS. 3A to 3D, FIG. 7Ais a diagram illustrating the same block operation timing as FIG. 5A,and FIG. 7B is a diagram illustrating an example of the second timechart recipe corresponding to the block operation timing of FIG. 5A.FIG. 8 is a diagram illustrating the numerical value example of the timechart recipe of FIG. 7B.

As illustrated in FIG. 7B, instead of the time of the first time chartrecipe of FIG. 4B, the second time chart recipe ends each step by givingpriority to the reaching to the block position where the operation ofeach block is instructed, and inputs an operation time difference (timedifference or interval time) for the adjustment of the processing timebetween the respective blocks to execute the operation of each block. Inother words, the time difference is the time from the completion of thelifting or lowering of each block to the start of the next step. Withthis, each block is reliably operated in each step, and then, can beoperated by the synchronization with other blocks.

In the first time chart recipe, the length of each step is set on thebasis of time, but in the second time chart recipe, the length of eachstep is set on the basis of time from the completion of the lifting orlowering of the block in each step to the start of the lifting orlowering of the block in the next step (hereinafter, referred to as atime difference or interval time). The “speed” and the “height(position)” in the second time chart recipe are the same as the firsttime chart recipe.

The “time difference” set to the second time chart recipe of FIG. 7Bwill be described.

(1) Block BLK1

As illustrated in FIG. 7B, the set value of the “time difference” of thesecond time chart recipe of FIG. 7B with respect to the block BLK1 isthe t2 in the first step (STEP1), (t4′+t5′+t6) in the second step(STEP2), and the t9 in the third step (STEP3).

(2) Block BLK2

As illustrated in FIG. 7B, the set value of the “time difference” of thesecond time chart recipe of FIG. 7B with respect to the block BLK2 is(t2+t10) in the first step (STEP1), (t5′+t6) in the second step (STEP2),and the t9 in the third step (STEP3).

(3) Block BLK3

As illustrated in FIG. 7B, the set value of the “time difference” of thesecond time chart recipe of FIG. 7B with respect to the block BLK2 is(t2+t10+t11) in the first step (STEP1), the t6 in the second step(STEP2), and the t9 in the third step (STEP3).

(4) Block BLK4

As illustrated in FIG. 7B, the set value of the “time difference” of thesecond time chart recipe of FIG. 7B with respect to the block BLK2 is(t2+t3+t4′+t5′+t6) in the first step (STEP1), and 0 in the second step(STEP2).

FIG. 8 illustrates an example in which in FIG. 7B, t2=50 ms, t3=50 ms,t4′=t5′=10 ms, t6=60 ms, t9=20 ms, t10=t11=10 ms, s1=s2=s3=s4=5 mm/s,h1=200 μm, and −h2=−50 μm.

Third Time Chart Recipe

A further example of the time chart recipe will be described withreference to FIGS. 9, 10A, and 10B. FIG. 9 is a diagram illustrating athird time chart recipe. FIGS. 10A and 10B are diagrams of assistance inexplaining an example of the third time chart recipe of FIG. 9 , FIG.10A is a diagram illustrating the numerical value example of the thirdtime chart recipe of FIG. 9 , and FIG. 10B is a diagram illustrating anexample of a block operation timing corresponding to the third timechart recipe of FIG. 10A.

As illustrated in FIG. 9 , the third time chart recipe has, in additionto the item of the first time chart recipe of FIG. 4B, the item of theacceleration for each block. When the numerical values as illustrated inFIG. 10A are set, the block operation timing as illustrated in FIG. 10Bis provided. Here, h1=200 μm, −h2=−50 μm, h3=25 μm, h4=175 μm, and−h5=−25 μm. With this, the non-linear operation of changing the liftingspeed of the respective blocks BLK1 to BLK4 is enabled.

Other Time Chart Recipes

Other examples of the time chart recipe will be described with referenceto FIGS. 11 to 13 . FIG. 11 is a diagram illustrating a fourth timechart recipe. FIG. 12 is a diagram illustrating a fifth time chartrecipe. FIG. 13 is a diagram illustrating a sixth time chart recipe. Theexample in which the number of steps (STEPs) of the time chart recipe is4 is illustrated, but the number of steps is not limited to 4, and maybe less than 4, and 5 or more.

As illustrated in FIG. 11 , the fourth time chart recipe has the item ofacceleration like the third time chart recipe, ends each step by givingpriority to the reaching to the instructed block position (height), andgoes to the next step. With this, even when there is an individualdifference of the operation speed and the like, the moving to otheroperation is enabled at the timing at which the block operation isreliably completed. Also, as illustrated in FIG. 11 , the fourth timechart recipe has the item of a waiting time (timer time) after thecompletion of the operation for the synchronization with other thrust-upblocks. Also, like the third time chart recipe, the non-linear operationof, for example, changing the lifting speed is enabled.

As illustrated in FIG. 12 , the fifth time chart recipe is provided withthe reference time of each step, in addition to the operation settingitems of the second time chart recipe, ends each step by giving priorityto the reaching to the block position where the operation of each blockis instructed, and inputs the operation time difference for theadjustment of the processing time between the respective blocks toexecute the operation of each block. With this, each block is reliablyoperated in each step, and then, can also be operated by thesynchronization with other blocks, and the non-linear operation of, forexample, changing the lifting speed is enabled.

As illustrated in FIG. 13 , the sixth time chart recipe has the items ofa speed calculation value and an acceleration calculation value in placeof the items of the speed and the acceleration of the third time chartrecipe, inputs a function for calculating the speed, the acceleration,the operation time (time), and the height (position), and performs theoperation according to an input value from the calculation result. Withthis, the more complex non-linear operation can be performed.

As described above, by the setting of the time chart recipe, theoperation of the respective blocks BLK1 to BLK4 of the thrust-up unit TUcan be freely set in the thrust-up operation step, and the thrust-upunit TU enables various operations. Its operation examples will bedescribed below.

First Operation Example

The thrust-up sequences of a first operation example that changes partof the thrust-up sequences of the RMS of FIGS. 3A to 3D will bedescribed with reference to FIGS. 14A to 14D and FIG. 15 . FIG. 14A is adiagram illustrating a first state of the thrust-up block sequence ofthe first operation example. FIG. 14B is a diagram illustrating a secondstate of the thrust-up block sequence of the first operation example.FIG. 14C is a diagram illustrating a third state of the thrust-up blocksequence of the first operation example. FIG. 14D is a diagramillustrating a fourth state of the thrust-up block sequence of the firstoperation example. FIG. 15 is a diagram illustrating an example of theblock operation timing of the sequences of FIGS. 14A to 14D.

As illustrated in FIG. 14A, in a first step (STEP1), each of the blocksBLK1 to BLK4 is lifted from the cycle height (here, 0) to above theheight at which the outer periphery of the die D is separated from thedicing tape DT, and is brought into the first state. For example, whenthe thrust-up height of the blocks BLK1 to BLK4 is 250 μm, and thethrust-up speed of the blocks BLK1 to BLK4 is 1 mm/s, the length of thefirst step is 250 ms. By the lifting of the blocks BLK1 to BLK4, theseparation of the outer periphery of the die D from the dicing tape DToccurs.

As illustrated in FIG. 14B, in a second step (STEP2), each of the blocksBLK2 to BLK4 is further lifted to be at the initial thrust-up height,whereas to secure a step in which the die D on the upper face of theblock BLK1 is separated from the dicing tape DT, the block BLK1 islowered to be in the second state. For example, the thrust-up heights ofthe blocks BLK1 to BLK4 are 100 μm, 350 μm, 340 μm, and 330 μm,respectively, and the thrust-up speed of the blocks BLK1 to BLK4 is 1mm/s. The length of the second step is 1150 ms. With this, theseparation of the die D from the dicing tape DT is advanced to the upperface of the block BLK1 (the edge of the block BLK2). At this time, thecollet CLT completely absorbs the die D. The operation so far is theinitial separation operation (the operation of separating the outerperiphery of the die).

As illustrated in FIG. 14C, in a third step (STEP3), each of the blockBLK1 and the block BLK2 is lowered to the cycle height at thepredetermined speed. For example, the thrust-up speed (lowering speed)of the blocks BLK1 and BLK2 is 5 mm/s. The length of the third step is170 ms. The separation of the die D from the dicing tape DT is advancedto the upper face of the block BLK2 (the edge of the block BLK3). Atthis time, the die is absorbed onto the collet CLT, and the upper faceof the block BLK 1 has been separated, and the die D at the lowering ofthe block BLK1 is not deformed, or is deformed in a very small amount.

As illustrated in FIG. 14D, in a fourth step (STEP4), the block BLK3 islowered to the cycle height at the predetermined speed. For example, thethrust-up speed (lowering speed) of the blocks BLK1 and BLK2 is 5 mm/s.The back face of the die D is separated from the dicing tape DT to theedge of the block BLK4.

As described above, during the lifting to the initial thrust-up heightin the first step and the second step, the separation of the outerperiphery of the die D from the dicing tape DT and the separation of thedie D from the dicing tape DT to the upper face of the block BLK1 areadvanced. In the third step thereafter, by performing the loweringoperation of the block BLK1, the deformation of the die can be minimum.

Second Operation Example

The thrust-up sequences of a second operation example will be describedwith reference to FIGS. 16A to 16D and FIG. 17 . FIG. 16A is a diagramillustrating a first state of the thrust-up block sequence of the secondoperation example. FIG. 16B is a diagram illustrating a second state ofthe thrust-up block sequence of the second operation example. FIG. 16Cis a diagram illustrating a third state of the thrust-up block sequenceof the second operation example. FIG. 16D is a diagram illustrating afourth state of the thrust-up block sequence of the second operationexample. FIG. 17 is a diagram illustrating an example of the blockoperation timing of the sequences of FIGS. 16A to 16D.

As illustrated in FIG. 16A, in a first step (STEP1), each of the blocksBLK1 to BLK4 is lifted to the predetermined height at the predeterminedspeed to be in the first state. For example, when the thrust-up heightsof the blocks BLK1 to BLK4 are 175 μm, 150 μm, 125 μm, and 100 μm,respectively, and the thrust-up speed of the blocks BLK1 to BLK4 is 1mm/s. The length of the first step is 175 ms. By the lifting of theblocks BLK1 to BLK4, the separation of the outer periphery of the die Dfrom the dicing tape DT occurs.

As illustrated in FIG. 16B, in a second step (STEP2), each of the blocksBLK1 to BLK4 is lowered to the predetermined height at the predeterminedspeed, and the block BLK1 is further lowered to be in the second state.For example, the thrust-up heights of the blocks BLK1 to BLK4 are −175μm, 0 μm, −25 μm, and −50 μm, respectively, and the thrust-up speed(lowering speed) of the blocks BLK1 to BLK4 is 1 mm/s. The length of thesecond step is 850 ms. The die D on the upper face of the block BLK1 isseparated from the dicing tape DT. In the state where the outerperipheral portion of the separated die D is sandwiched between theupper face of the dome plate DP and the collet CLT, the die D on theupper face of the block BLK1 is separated from the dicing tape DT toreduce the deformation of the die D.

As illustrated in FIG. 16C, in a third step (STEP3), each of the blocksBLK2 to BLK4 is lifted to the predetermined height at the predeterminedspeed to be in the third state. For example, the thrust-up heights ofthe blocks BLK1 to BLK4 are −175 μm, 300 μm, 275 μm, and 250 μm,respectively, and the thrust-up speed of the blocks BLK2 to BLK4 is 1mm/s. The length of the third step is 850 ms.

As illustrated in FIG. 16D, in a fourth step (STEP4), the block BLK2 islowered to the predetermined height at the predetermined speed to be inthe fourth state. For example, the thrust-up heights of the blocks BLK1to BLK4 are −175 μm, 0 μm, 275 μm, and 250 μm, respectively, and thethrust-up speed (lowering speed) of the block BLK2 is 5 mm/s. The lengthof the fourth step is 160 ms.

Third Operation Example

The thrust-up sequences of a third operation example will be describedwith reference to FIG. 18 . FIG. 18 is a diagram illustrating thethrust-up block sequences of the third operation example.

In a zeroth step (STEP0), each of the blocks BLK1 to BLK4 is placed atthe waiting position (the height of 0 μm).

In a first step (STEP1), each of the blocks BLK1 to BLK4 is lifted tothe predetermined height at the predetermined speed. For example, thethrust-up height of each of the blocks BLK1 to BLK4 is 200 μm, and thethrust-up speed of the blocks BLK1 to BLK4 is 1 mm/s. The outerperiphery of the die D is separated from the dicing tape DT. Thus, theblock step at the separation of the outer periphery of the die D fromthe dicing tape DT is 200 μm.

In a second step (STEP2), the block BLK1 is lowered to the predeterminedheight at the predetermined speed, and each of the BLK2 to the BLK4 islifted to the predetermined height at the predetermined speed. Forexample, the thrust-up heights of the blocks BLK1 to BLK4 are 100 μm,300 μm, 300 μm, and 300 μm, respectively, and the thrust-up speed(lowering speed or lifting speed) of each of the blocks BLK1 to BLK4 is5 mm/s. The die D on the upper face of the block BLK1 is separated fromthe dicing tape DT. The block BLK1 is lowered by 100 μm at 5 mm/s, andthe blocks BLK2 to BLK4 are lifted by 100 μm at 5 mm/s.

In a third step (STEP3), each of the blocks BLK1 and BLK2 is lowered tothe predetermined height at the predetermined speed, and each of theBLK3 and BLK4 is lifted to the predetermined height at the predeterminedspeed. For example, the thrust-up heights of the blocks BLK1 to BLK4 are0 μm, 200 μm, 400 μm, and 400 μm, respectively, and the thrust-up speed(lowering speed or lifting speed) of each of the blocks BLK1 to BLK4 is5 mm/s. The die D on the upper face of the block BLK2 is separated fromthe dicing tape DT. The block BLK2 is lowered by 100 μm at 5 mm/s, andthe blocks BLK3 and BLK4 are lifted by 100 μm at 5 mm/s.

In a fourth step (STEP4), each of the blocks BLK2 and BLK3 is lowered tothe predetermined height at the predetermined speed, and the BLK4 islifted to the predetermined height at the predetermined speed. Forexample, the thrust-up heights of the blocks BLK1 to BLK4 are 0 μm, 100μm, 300 μm, and 500 μm, respectively, and the thrust-up speed (loweringspeed or lifting speed) of each of the blocks BLK1 to BLK4 is 5 mm/s.The die D on the upper face of the block BLK2 is separated from thedicing tape DT. The block BLK3 is lowered by 100 μm at 5 mm/s, and theblock BLK4 is lifted by 100 μm at 5 mm/s.

In the third operation example, by operating the thrust-up block up anddown, the block can be operated at a relative speed of 10 mm/s even whena motor having the highest speed of 5 mm/s is used.

Fourth Operation Example

The thrust-up sequences of a fourth operation example will be describedwith reference to FIG. 19 . FIG. 19 is a diagram illustrating theoperation timing of the block of the thrust-up unit and the collet ofthe fourth operation example.

Although the control of the operation of the block BLK of the thrust-upunit on the basis of the setting of the time chart recipe has beendescribed until the third operation example, the operation of the colletCLT provided to the head BH may be controlled. In this case, the colletCLT is also operated in conjunction with the block BLK of the thrust-upunit TU.

As illustrated in FIG. 19 , the fourth operation example is started withthe positioning of the targeted die D on the dicing tape DT to thethrust-up unit TU and the collet CLT by the operation controller 81 b.When the positioning is completed, the operation controller 81 bperforms vacuumizing through the suction holes and the gaps, notillustrated, of the thrust-up unit TU, so that the dicing tape DT isabsorbed onto the upper face of the thrust-up unit TU (a zeroth step(STP0)). At this time, the upper faces of the blocks BLK1 to BLK4 are atthe same height as the upper face of the dome plate DP (initialposition). In that state, the operation controller 81 b supplies vacuumfrom the vacuum supply source, and lowers the collet CLT toward thedevice face of the die D at the predetermined speed while performingvacuumizing (a first step (STP1 a)) and lands the collet CLT at thelowered predetermined speed (a second step (STP2 a)).

Thereafter, the operation controller 81 b lifts the respective blocksBLK1 to BLK4 to the predetermined heights at the same time at theconstant speeds (a first step (STP1)). Here, the thrust-up speed of thecollet CLT is lower in the order of the block BLK1, the block BLK2, theblock BLK3, and the block BLK4. The operation controller 81 b lifts thecollet CLT in conjunction with the thrust-up operation of the block BLK1in the outermost periphery having the highest thrust-up speed (a thirdstep (STP3 a)). The operation controller 81 b performs the absorption ofthe dicing tape DT by the vacuum absorption when the predetermined timeelapses after the first-stage thrust-up operation of the blocks BLK1 toBLK4.

Thereafter, the operation controller 81 b lifts the respective blocksBLK1 to BLK4 to the predetermined heights at the same time three timesat the constant speeds (a second step (STP2), a third step (STP3), and afourth step (STP4)). At this time, the operation controller 81 b liftsthe collet CLT in conjunction with the thrust-up operation of the blockBLK1 in the outermost periphery having the highest thrust-up speed (afourth step (STP4 a), a fifth step (STP5 a), and a sixth step (STP6 a)).

The operation controller 81 b stops the vacuum suction and starts theblowout of air when the predetermined time elapses after thefourth-stage thrust-up operation of the blocks BLK1 to BLK4 (the fourthstep (STP4)). Thereafter, the operation controller 81 b lifts the colletCLT to separate the entire die D from the dicing tape DT. Thereafter,the operation controller 81 b returns the blocks BLK1 to BLK4 to theinitial position (a fifth step (STP5)). The operation controller 81 bstops the blowout of air at the timing at which the collet is returnedto the initial position. The collet CLT picks up the die D and islifted, and the dicing tape DT can be removed from the thrust-up unit TUby the blowout of air.

Fifth Operation Example

When some malfunction is caused while the thrust-up unit TU performs thethrust-up operation of the block BLK, the thrust-up operation is variedand performed (continued) according to the condition of the malfunctionwithout being interrupted for retry and stopped.

For example, in the first state of FIG. 3A, as described above, thedicing tape DT is separated in the periphery of the die D. However, onthe other hand, at this time, the periphery of the die D receives astress on its lower side, and is curved. Then, a gap is formed betweenthe die D and the lower face of the collet CLT, so that air flows intothe vacuum suction system of the collet CLT. As a result, the suctionamount output of the gas flow rate sensor 87 c provided in the vacuumsuction system is increased, and leak is detected. When the leak isdetected while the block BLK1 that is the outermost peripheral block islifted, and the leak amount is the predetermined value or less, theoperation of the driving of each of the blocks BLK1 to BLK4 of thethrust-up unit TU is continued. In particular, when all the blocks BLK1to BLK4 are lifted at first, the blocks BLK1 to BLK4 are lifted untilthe separation is started within the predetermined range. That is, forexample, in the case of the thrust-up operation sequences of FIG. 4A,even when leak is caused, the lifting of the blocks BLK1 to BLK4 in thefirst step is continued. With this, according to the degree of anabnormality caused during the operation, the process can be performed tosave the die. It should be noted that when the leak amount is more thanthe predetermined value, the operation of the driving of each of theblocks BLK1 to BLK4 of the thrust-up unit TU is changed to be performed,retried, and stopped.

Sixth Operation Example

With the shape of the die D to be picked up, the operation of the blocksBLK1 to BLK4 of the thrust-up unit TU is performed on the basis of thetime chart recipe set according to the previously assumed operationconditions. Further, by image recognition and a measuring element, suchas a laser displacement meter, the shape of the die D to be picked up ismeasured, or the specific shape that the device has is stored andreferred, and the time chart recipe to which the thrust-up proceduresuitable for it (the block operation order and the height) is set isselected to perform the pick-up. With this, the pick-up of the diedeformed due to the influence of the product structure can be optimizedfor each shape.

Seventh Operation Example

The operation of the driving (shaft) of each of the blocks BLK1 to BLK4of the thrust-up unit TU is performed on the basis of the time chartrecipe set according to the state of the adjacent (peripheral) area inthe wafer of the die D to be picked up. Since the extension allowanceand the like of the dicing tape DT is significantly changed according tothe presence or absence of the die D in the adjacent area, and thethrust-up amount for partially extending this is different, theoperation is performed at the thrust-up height and the thrust-up speedaccording to this. With this, the influence according to the presence orabsence of the die D on the adjacent wafer can be reduced.

Eighth Operation Example

The operation of lowering the block near the center (for example, onlythe block BLK4, or both of the block BLK3 and the block BLK4) isperformed during the lifting of all the blocks BLK1 to BLK4 of thethrust-up unit TU. With this, also in the pick-up by the collet having aconvex curved shape on its absorption face and used for void solutionand the like during bonding, and the like, the stable die thrust-upoperation can be performed.

Ninth Operation Example

The previously observed backlash of the ball screw and the gear of thethrust-up unit TU is corrected to set the time chart recipe, and thethrust-up operation is performed on the basis of the set time chartrecipe. With this, the influence due to the machine difference betweenthe devices of the thrust-up unit TU can be reduced.

Tenth Operation Example

The thrust-up operation is performed on the basis of the time chartrecipe set on the basis of the parameter calculated from the operationdata obtained by previously evaluating the operation of the driving(shaft) of each of the blocks BLK1 to BLK4 of the thrust-up unit TU.With this, the optimum non-linear thrust-up sequences can be executed.

Eleventh Operation Example

The data obtained by performing simulation on the external PC is set tothe time chart recipe, and the thrust-up operation is performed on thebasis of the set time chart recipe. With this, the optimum non-linearthrust-up sequences can be executed.

Twelfth Operation Example

The data obtained by monitoring the actual separation state by animaging device and the like is fed back to performing simulation and thefed back simulation data is set to the time chart recipe, and thethrust-up operation is performed on the basis of the set time chartrecipe. With this, the optimum non-linear thrust-up sequences can beexecuted.

Thirteenth Operation Example

When the pick-up is stably performed, the block BLK1 in the outermostperiphery is lowered to observe leak by the sensor 87 b, and theseparation of the die D from the dicing tape DT is observed by theimaging device and the like, the operation is advanced to the lowering.With this, the stress to the die due to the continuously performedseparation operation in the state where the outer periphery of the dieis not separated can be reduced, and the pick-up of the die can beperformed in the always stable state without cracking.

According to the embodiment, the operation of the block of the thrust-upunit can be freely set by the program recipe. With this, each optimumblock according to the type and the structure of a targeted product andthe type of the material from the viewpoint of the low stress propertiesto the die or the high-speed pick-up properties can be operated. Withthis, the die bonding of the thin die can be performed without cracking.

Also, according to the embodiment, the switching (free setting) to theoperation according to the condition of the die being operated isenabled even during the operation. With this, according to the conditionobserved during the operation, the operation is stopped once in eachstep, and can be restarted during that. With this, the suitableoperation according to the die, the material, and the change due to theenvironment can be performed.

EXAMPLE

FIG. 20 is a top view illustrating the overview of the die bonderaccording to an example. FIG. 21 is a diagram of assistance inexplaining the operation of the pick-up head and the bonding head, seenfrom the direction of the arrow A of FIG. 20 .

A die bonder 10 that is an example of the semiconductor manufacturingapparatus is divided roughly to have a die supplying section 1 supplyingthe die D to be mounted onto a substrate S on which one or a pluralityof product areas becoming one final package (hereinafter, referred to asa package area P or package areas P) are printed, a pick-up section 2,an intermediate stage section 3, a bonding section 4, a conveyingsection 5, a substrate supplying section 6, a substrate conveying-outsection 7, and a control section 8 monitoring and controlling theoperation of each section. The Y-axis direction is the front-reardirection of the die bonder 10, and the X-axis direction is theleft-right direction of the die bonder 10. The die supplying section 1is disposed on the front side of the die bonder 10, and the bondingsection 4 is disposed on the rear side of the die bonder 10.

First, the die supplying section 1 supplies the die D to be mounted onthe package area P of the substrate S. The die supplying section 1 has awafer holding stage 12 holding a wafer 11, and a thrust-up unit 13indicated by the dotted line and thrusting up the die D from the wafer11. The die supplying section 1 is moved in the XY-axis direction by adriving element, not illustrated, and moves the die D to be picked up tothe position of the thrust-up unit 13.

The pick-up section 2 has a pick-up head 21 picking up the die D, a Ydriving section 23 of the pick-up head moving the pick-up head 21 in theY-axis direction, and respective driving sections, not illustrated,lifting and lowering the collet 22, rotating the collet 22, and movingthe collet 22 in the X-axis direction. The pick-up head 21 has thecollet 22 (also see FIG. 21 ) absorbing and holding the thrusted-up dieD at its end, picks up the die D from the die supplying section 1, andplaces it onto an intermediate stage 31. The pick-up head 21 has therespective driving sections, not illustrated, lifting and lowering thecollet 22, rotating the collet 22, and moving the collet 22 in theX-axis direction.

The intermediate stage section 3 has the intermediate stage 31 fortemporarily placing the die D thereonto, and a stage recognition camera32 for recognizing the die D on the intermediate stage 31.

The bonding section 4 picks up the die D from the intermediate stage 31,bonds it onto the package area P of the substrate S being conveyed, orbonds it so as to stack it onto the die that is already bonded onto thepackage area P of the substrate S. The bonding section 4 has a bondinghead 41 including a collet 42 (also see FIG. 21 ) absorbing and holdingthe die D at its end like the pick-up head 21, a Y-axis driving section43 moving the bonding head 41 in the Y-axis direction, and a substraterecognition camera 44 imaging the position recognition mark (notillustrated) of the package area P of the substrate S, and recognizingthe bonding position.

With such a configuration, the bonding head 41 corrects the pick-upposition and posture on the basis of the imaging data of the stagerecognition camera 32, picks up the die D from the intermediate stage31, and bonds the die D onto the substrate on the basis of the imagingdata of the substrate recognition camera 44.

The conveying section 5 has substrate conveying claws 51 grasping andconveying the substrate S, and a conveying lane 52 in which thesubstrate S is moved. The substrate S is moved by driving the nuts, notillustrated, of the substrate conveying claws 51 provided to theconveying lane 52 by ball screws, not illustrated, provided along theconveying lane 52.

With such a configuration, the substrate S is moved to the bondingposition from the substrate supplying section 6 along the conveying lane52, is moved to the substrate conveying-out section 7 after the bonding,and is transferred to the substrate conveying-out section 7.

The control section 8 includes a memory storing a program (software)monitoring and controlling the operation of each section of the diebonder 10, and a central processor unit (CPU) executing the programstored in the memory.

Next, the configuration of the die supplying section 1 will be describedwith reference to FIGS. 22 and 23 . FIG. 22 is a diagram illustrating anappearance perspective view of the die supplying section of FIG. 20 .FIG. 23 is a schematic cross-sectional view illustrating the main partof the die supplying section of FIG. 20 .

The die supplying section 1 includes the wafer holding stage 12 moved inthe horizontal direction (XY-axis direction), and the thrust-up unit 13moved in the up-down direction. The wafer holding stage 12 has an expandring 15 holding a wafer ring 14, and a support ring 17 horizontallypositioning a dicing tape 16 held by the wafer ring 14 and to which aplurality of dies D are stuck. The thrust-up unit 13 is disposed insidethe support ring 17.

The die supplying section 1 lowers the expand ring 15 holding the waferring 14 during the thrust-up of the die D. As a result, the dicing tape16 held by the wafer ring 14 is expanded to increase the gap between thedies D, the die D is thrusted up from the lower side of the die D by thethrust-up unit 13, thereby improving the pick-up properties of the dieD. It should be noted that an adhesive sticking the die to the substrateis brought from the liquid form into the film form, and the film-likeadhesive material called a die attach film (DAF) 18 is stuck between thewafer 11 and the dicing tape 16. In the wafer 11 having the die attachfilm 18, the dicing is performed with respect to the wafer 11 and thedie attach film 18. Therefore, in the separation step, the wafer 11 andthe die attach film 18 are separated from the dicing tape 16. It shouldbe noted that hereinafter, the separation step will be described byneglecting the presence of the die attach film 18.

Next, the thrust-up unit 13 will be described with reference to FIGS. 24to 29 . FIG. 24 is an appearance perspective view of the thrust-up unitaccording to the example. FIG. 25 is a top view of part of a first unitof FIG. 24 . FIG. 26 is a top view of part of a second unit of FIG. 24 .FIG. 27 is a top view of part of a third unit of FIG. 24 . FIG. 28 is alongitudinal cross-sectional view of the thrust-up unit of FIG. 24 .FIG. 29 is a longitudinal cross-sectional view of the thrust-up unit ofFIG. 24 .

The thrust-up unit 13 includes a first unit 13 a, a second unit 13 b onwhich the first unit 13 a is mounted, and a third unit 13 c on which thesecond unit 13 b is mounted. The second unit 13 b and the third unit 13c are shared portions regardless of the product type, and the first unit13 a is a portion that is replaceable for each product type.

The first unit 13 a has a block 13 a 1 having blocks A1 to A4, a domeplate 13 a 2 having a plurality of absorption holes, a suction hole 13 a3, and a suction hole 13 a 4 for dome absorption, and converts theup-down movement of blocks B1 to B4 in concentric circular shape of thesecond unit 13 b to the up-down movement of the four blocks A1 to A4 inconcentric square shape. The blocks A1 to A4 correspond to the blocksBLK4 to BLK1 of the embodiment, respectively. The four blocks A1 to A4can be moved up and down independently. The planar shape of the blocksA1 to A4 in concentric square shape is matched with the shape of the dieD. When the die size is large, the number of blocks in concentric squareshape is more than 4. This is enabled since a plurality of outputsections of the third unit and the blocks in concentric circular shapeof the second unit are moved up and down mutually independently (or arenot moved up and down). The thrust-up speed and the thrust-up amount ofeach of the four blocks A1 to A4 can be set to be programable.

The second unit 13 b has blocks B1 to B6 in circular tube shape, and anouter peripheral portion 13 b 2, and converts the up-down movement ofoutput sections C1 to C6 disposed on the circumference of the first unit13 a to the up-down movement of the six blocks B1 to B6 in concentriccircular shape. The six blocks B1 to B6 can be moved up and downmutually independently. Here, since the first unit 13 a has only thefour blocks A1 to A4, the blocks B5 and B6 are not used.

The third unit 13 c includes a center portion 13 c 0, and six peripheralportions 13 c 1 to 13 c 6. The center portion 13 c 0 has the six outputsections C1 to C6 disposed at equal intervals on the circumference ofits upper face and moved up and down independently. The peripheralportions 13 c 1 to 13 c 6 can drive the output sections C1 to C6mutually independently, respectively. The peripheral portions 13 c 1 to13 c 6 include motors M1 to M6, respectively, and the center portion 13c 0 is provided with plunger mechanisms P1 to P6 converting the rotationof the motors to the up-down movement by cams or links. The plungermechanisms P1 to P6 give up-down movement to the output sections C1 toC6, respectively. It should be noted that the motors M2 and M5 and theplunger mechanisms P2 and P5 are not illustrated. Here, since the firstunit 13 a has only the four blocks A1 to A4, the peripheral portions 13c 5 and 13 c 6 are not used. Thus, the motors M5 and M6, the plungermechanisms P5 and P6, and the output sections C5 and C6 are not used.The output sections C1 to C4 correspond to the needles NDL1 to NDL4 ofthe embodiment, respectively.

Next, the relation between the thrust-up unit and the collet will bedescribed with reference to FIG. 30 . FIG. 30 is a diagram illustratingthe configuration of the thrust-up unit and the collet of the pick-uphead according to the example.

As illustrated in FIG. 30 , the collet 20 has the collet 22, a colletholder 25 holding the collet 22, suction holes 22 v provided in thecollet 22 and absorbing the die D, and a suction hole 25 v provided inthe collet holder 25 and absorbing the die D. The absorption face of thecollet 22 absorbing the die has substantially the same size as the dieD.

The first unit 13 a has the dome plate 13 a 2 in the periphery of itsupper face. The dome plate 13 a 2 has a plurality of absorption holes HLand a plurality of hollow portions CV, and performs suctioning from thesuction hole 13 a 3 to suction a die Dd in the periphery of the die D tobe picked up by the collet 22 through the dicing tape 16. FIG. 30illustrates only one line of the absorption holes HL in the periphery ofthe block 13 a 1, but a plurality of lines of the absorption holes HLare provided to stabilize and hold the die Dd not to be picked up. Thesuctioning is performed from the suction hole 13 a 4 for dome absorptionthrough gaps A1 v, A2 v, and A3 v between the respective blocks A1 to A4in concentric square shape and the hollow portions in the dome of thefirst unit 13 a, and the die D to be picked up by the collet 22 issuctioned through the dicing tape 16. The suctioning from the suctionhole 13 a 3 and the suctioning from the suction hole 13 a 4 can beperformed independently.

The thrust-up unit 13 of this example is applicable to various dies bychanging the shape of the block and the number of blocks of the firstunit, and when the number of blocks is, for example, 6, the thrust-upunit 13 is applicable to the die having a die size of 20 mm square orless. By increasing the number of output sections of the third unit, thenumber of blocks in concentric circular shape of the second unit, andthe number of blocks in concentric square shape of the first unit, thethrust-up unit 13 is applicable to the die having a die size above 20 mmsquare.

Next, the control section 8 will be described with reference to FIG. 31. FIG. 31 is a block diagram illustrating the schematic configuration ofa control system of the die bonder of FIG. 20 . A control system 80includes the control section 8, a driving section 86, a signalingsection 87, and an optical system 88. The control section 8 is dividedroughly to mainly have a control and calculation device 81 configured ofa CPU (Central Processor Unit), a memory device 82, an input/outputdevice 83, a bus line 84, and a power source 85. The control andcalculation device 81 and the memory device 82 correspond to the maincontroller 81 a of the embodiment, and a motor control device 83 ecorresponds to the operation controller 81 b of the embodiment. Thememory device 82 has a main memory device 82 a configured of a RAMstoring a processing program and the like, and an auxiliary memorydevice 82 b configured of an HDD, an SSD, and the like storing controldata, image data, and the like necessary for control. The input/outputdevice 83 has the monitor 83 a displaying a device state, information,and the like, the touch panel 83 b inputting the instruction of theoperator, a mouse 83 c operating the monitor, and an image fetchingdevice 83 d fetching image data from the optical system 88. Also, theinput/output device 83 has the motor control device 83 e controlling thedriving section 86 such as the XY table (not illustrated) of the diesupplying section 1 and the ZY driving shaft of the bonding head table,and an I/O signal control device 83 f fetching or controlling varioussensor signals and the signal from the signaling section 87 such as theswitch of a lighting device. The optical system 88 includes a waferrecognition camera 24, the stage recognition camera 32, and thesubstrate recognition camera 44. The control and calculation device 81fetches necessary data through the bus line 84, calculates it, controlsthe pick-up head 21 and the like, and sends information to the monitor83 a and the like.

The control section 8 stores image data imaged by the wafer recognitioncamera 24, the stage recognition camera 32, and the substraterecognition camera 44 through the image fetching device 83 d into thememory device 82. By the software programmed on the basis of the storedimage data, the positioning of the die D and the package area P of thesubstrate S and the surface inspection of the die D and the substrate Sare performed by using the control and calculation device 81. Thedriving section 86 is moved through the motor control device 83 e by thesoftware on the basis of the positions of the die D and the package areaP of the substrate S calculated by the control and calculation device81. By this process, the positioning of the die on the wafer isperformed, and the die D is operated by the driving sections of thepick-up section 2 and the bonding section 4, and is bonded onto thepackage area P of the substrate S. Each of the wafer recognition camera24, the stage recognition camera 32, and the substrate recognitioncamera 44 used is a grayscale, a color camera, and the like, andconverts the optical intensity to a numerical value.

Next, the pick-up operation by the thrust-up unit 13 by the aboveconfiguration will be described with reference to FIG. 32 . FIG. 32 is aflowchart illustrating the processing flow of the pick-up operation.

Step S1: The control section 8 moves the wafer holding stage 12 so thatthe die D to be picked up is located immediately above the thrust-upunit 13, and moves the thrust-up unit 13 so that the upper face of thethird unit comes into contact with the back face of the dicing tape 16.At this time, as illustrated in FIG. 30 , the control section 8 allowsthe respective blocks A1 to A4 of the block 13 a 1 to form the sameplane as the surface of the dome plate 13 a 2, and the dicing tape 16 isabsorbed through the absorption holes HL of the dome plate 13 a 2 andthe gaps A1 v, A2 v, and A3 v between the blocks.

Step S2: The control section 8 lowers the collet 20, positions it on thedie D to be picked up, and absorbs the die D through the suction holes22 v and 25 v.

Step S3: The control section 8 lifts the respective blocks A1 to A4 ofthe block 13 a 1 to perform the separation operation. Here, the controlsection 8 performs control, on the basis of, for example, the first timechart recipe (FIG. 6 ) of the embodiment. That is, the control section 8drives the plunger mechanisms P4, P3, P2, and P1 by the motors M4, M3,M2, and M1, respectively, lifts the blocks A4, A3, A2, and A1 by 200 μmthrough the output sections C4, C3, C2, and C1 and the blocks B4, B3,B2, and B1, respectively, and stops them. Next, the control section 8drives the plunger mechanism P4 by the motor M4, lowers only the blockA4 on the outermost side to −50 μm through the output section C4 and theblock B4, and stops it. Then, the control section 8 drives the plungermechanism P3 by the motor M3, and lowers only the block A3 on the secondoutermost side to −50 μm through the output section C3 and the block B3,and stops it. Then, the control section 8 drives the plunger mechanismP2 by the motor M2, lowers only the block A2 on the third outermost sideto −50 μm through the output section C2 and the block B2, and stops it.Finally, the control section 8 drives the plunger mechanism P1 by themotor M1, lowers only the block A1 on the innermost side to 0 μm throughthe output section C1 and the block B1, and stops it.

Step S4: The control section 8 lifts the collet. In the last state ofstep S3, the contact area of the dicing tape 16 and the die D becomesthe area that can be separated by the lifting of the collet, and the dieD can be separated by the lifting of the collet 22.

Step S5: The control section 8 allows the respective blocks A1 to A4 ofthe block 13 a 1 to form the same plane as the surface of the dome plate13 a 2, and the absorption of the dicing tape 16 through the absorptionholes HL of the dome plate 13 a 2 and the gaps A1 v, A2 v, and A3 vbetween the blocks is stopped. The control section 8 moves the thrust-upunit 13 so that the upper face of the first unit is separated from theback face of the dicing tape 16.

The control section 8 repeats steps S1 to S5, and picks up the good dieof the wafer 11.

Next, the manufacturing method for a semiconductor device by using thedie bonder according to the example will be described with reference toFIG. 33 . FIG. 33 is a flowchart illustrating the manufacturing methodfor a semiconductor device of FIG. 20 .

Step S11: The wafer ring 14 holding the dicing tape 16 to which the dieD divided from the wafer 11 is stuck is stored in a wafer cassette (notillustrated), and is conveyed into the die bonder 10. The controlsection 8 supplies the wafer ring 14 from the wafer cassette in whichthe wafer ring 14 is loaded, to the die supplying section 1. Also, thesubstrate S is prepared, and is conveyed into the die bonder 10. Thecontrol section 8 mounts the substrate S onto the substrate conveyingclaws 51 by the substrate supplying section 6.

Step S12: The control section 8 separates the die D, as described above,and picks up the separated die D from the wafer 11. In this way, the dieD separated from the dicing tape 16 together with the die attach film 18is absorbed onto and held by the collet 22 to be conveyed to the nextstep (step S13). Then, when the collet 22 that has conveyed the die D tothe next step is returned to the die supplying section 1, the next die Dis separated from the dicing tape 16 according to the above procedure,and each die D is separated from the dicing tape 16 according to thesame procedure hereinafter.

Step S13: The control section 8 mounts the picked-up die onto thesubstrate S or stacks it on the already bonded die. The control section8 places the die D picked up from the wafer 11 onto the intermediatestage 31, picks up the die D from the intermediate stage 31 again by thebonding head 41, and bonds it onto the conveyed substrate S.

Step S14: The control section 8 takes out the substrate S on which thedie D is bonded, from the substrate conveying claws 51 by the substrateconveying-out section 7. The substrate S is conveyed out from the diebonder 10.

As described above, the die D is mounted onto the substrate S throughthe die attach film 18, and is conveyed out from the die bonder.Thereafter, the die D is electrically connected with the electrode ofthe substrate S through the Au wire in the wire bonding step.Subsequently, the substrate S on which the die D is mounted is conveyedinto the die bonder, and the second die D is stacked through the dieattach film 18 onto the die D mounted on the substrate S, is conveyedout from the die bonder, and then, is electrically connected with theelectrode of the substrate S through the Au wire in the wire bondingstep. The second die D is separated from the dicing tape 16 by the abovemethod, and then, is conveyed to the pellet bonding step, and is stackedonto the die D. After the above process is repeated a predeterminednumber of times, the substrate S is conveyed to the mold step, and aplurality of dies D and the Au wire are sealed by a mold resin (notillustrated), thereby completing the stack package.

As described above, in the assembling of the stack package in which theplurality of dies are mounted on the substrate in three dimensions, thethickness of the die is required to be made smaller to 20 μm or less inorder to prevent the package thickness from being increased. On theother hand, since the thickness of the dicing tape is about 100 μm, thethickness of the dicing tape is four to five times the thickness of thedie.

When such the thin die is separated from the dicing tape, thedeformation of the die following the deformation of the dicing tape iscaused more significantly, but in the die bonder of this embodiment, thedamage of the die when the die is picked up from the dicing tape can bereduced.

The invention that has been made by the present inventors has beenspecifically described above on the basis of the embodiment and theexample, but the present invention is not limited to the embodiment andthe example, and needless to say, various modifications can be made.

For example, the plurality of blocks of the first unit are in concentricsquare shape in the above description, but may be in concentric circularshape and concentric elliptic shape, and may be configured of squareblocks aligned in parallel.

Also, in the example, the example in which the die attach film is usedhas been described, but a preform section applying the adhesive to thesubstrate may be provided, and the die attach film is not necessarilyrequired to be used.

Also, in the example, the die bonder in which the die is picked up fromthe die supplying section by the pick-up head to be placed onto theintermediate stage, and the die placed on the intermediate stage isbonded onto the substrate by the bonding head, has been described, butthe present invention is not limited to this, and is applicable to thesemiconductor manufacturing apparatus picking up the die from the diesupplying section.

For example, the present invention is applicable to the die bonder nothaving the intermediate stage and the pick-up head and bonding the diein the die supplying section onto the substrate by the bonding head.

Also, the present invention is applicable to a flip chip bonder nothaving the intermediate stage, picking up the die from the die supplyingsection, rotating the die pick-up head upward, transferring it to thebonding head, and bonding it onto the substrate by the bonding head.

Also, the present invention is applicable to a die sorter not having theintermediate stage and the bonding head and placing the die picked upfrom the die supplying section by the pick-up head onto a tray and thelike.

What is claimed is:
 1. A manufacturing method for a semiconductor devicecomprising: (a) a step of conveying a wafer ring holding a dicing tapeinto a semiconductor manufacturing apparatus including a thrust-up unit,having a plurality of blocks in contact with a dicing tape and beingcapable of operating independently and thrusting up a die from a lowerside of the dicing tape, and a collet absorbing the die; and (b) a stepof thrusting up the die by the thrust-up unit and picking up the die bythe collet, wherein the (b) step configures the thrust-up sequences ofthe plurality of blocks in a plurality of steps, and lifts or lowers theplurality of blocks based on a time chart recipe capable of setting aheight and a speed of the plurality of blocks for each block and in eachstep.
 2. The manufacturing method according to claim 1, wherein thesemiconductor manufacturing apparatus further comprises a detectorcapable of detecting the thrust-up condition of the thrust-up unit,wherein the (b) step changes, based on a detection result of thedetector during one thrust-up sequence, an operation in the onethrust-up sequence.
 3. The manufacturing method according to claim 2,wherein when all of the plurality of blocks are lifted in the first stepof the plurality of steps, the (b) step continues the lifting of all ofthe plurality of blocks when the detector detects a leak when anoutermost block of the plurality of blocks is lifted, and when the leakis a predetermined value or less.
 4. The manufacturing method accordingto claim 1, wherein the time chart recipe is further capable of settinga time of the step for each block and in each step, and wherein the step(b) lifts or lowers the plurality of blocks based on the time chartrecipe.
 5. The manufacturing method according to claim 1, wherein the(b) step ends each step by giving priority to each block reaching adesignated position, and wherein the time chart recipe is furthercapable of setting a time difference from completion of the lifting orlowering of each block to a start time of a next step.
 6. Themanufacturing method according to claim 4, wherein the time chart recipeis capable of setting an acceleration of each block.
 7. Themanufacturing method according to claim 4, wherein the (b) step endseach step by giving priority to each block reaching a designatedposition, and wherein the time chart recipe is further capable ofsetting an acceleration of each block and a waiting time aftercompletion of the lifting or lowering for synchronization of each block.8. The manufacturing method according to claim 5, wherein the (b) stepends each step by giving priority to each block reaching a designatedposition, and wherein the time chart recipe is further capable ofsetting a reference time that is a reference of the time difference. 9.The manufacturing method according to claim 6, wherein the time, thespeed, the acceleration, and the height are set based on the calculationresult obtained by inputting a function.
 10. The manufacturing methodaccording to claim 1, wherein the (b) step independently operates theplurality of blocks by a plurality of driving shafts providedcorresponding to the plurality of blocks.
 11. The manufacturing methodaccording to claim 1, wherein the semiconductor manufacturing apparatusfurther includes: a pick-up head having the collet; an intermediatestage placing the die to be picked up by the pick-up head; and a bondinghead, wherein the manufacturing method further comprises (c) a step ofbonding the die to be placed onto the intermediate stage onto asubstrate or an already bonded die by the bonding head.
 12. Themanufacturing method according to claim 1, wherein the step (b) liftsall upper surfaces of the plurality of blocks from an initial positionto a first predetermined height based on the time chart recipe, and thenlifts upper surfaces of inner blocks other than a first block arrangedon outermost side of the plurality of blocks from the firstpredetermined height to a second predetermined height.
 13. Themanufacturing method according to claim 12, wherein the step (b), beforelifting the upper surfaces of the inner blocks from the firstpredetermined height to the second predetermined height, lowers an uppersurface of the first block from the first predetermined height.
 14. Themanufacturing method according to claim 12, wherein while all of theplurality of blocks are in the initial position, the step (b) sucks thedicing tape and lands the collet on the die to suck the die by thecollect.
 15. The manufacturing method according to claim 13, wherein thestep (b) sucks the dicing tape and lands the collet on the die to suckthe die by the collet, while all of the plurality of blocks are in theinitial position.
 16. The manufacturing method according to claim 14,wherein in the step (b) lowers the upper surfaces of the plurality ofblocks other than a block arranged on an innermost side from the secondpredetermined height, and then lifts the collet.
 17. The manufacturingmethod according to claim 15, wherein in the step (b) lowers the uppersurfaces of the plurality of blocks other than a block arranged on aninnermost side from the second predetermined height, and then lifts thecollet.
 18. The manufacturing method according to claim 14, wherein thestep (b) lifts the collect, and then moves all of the upper surfaces ofthe plurality of blocks to the initial position.
 19. The manufacturingmethod according to claim 15, wherein the step (b) lifts the collect,and then moves all of the upper surfaces of the plurality of blocks tothe initial position.